Switching Loss Characterization of Semiconductor Power Devices

Testing Capabilities

• Automatic double-pulse testing of 3- and 4-terminal power devices
• Turn-on, Turn-off, Dynamic on-resistance, Dynamic current and voltage, Switching characteristics, Reverse recovery, Gate charge, Derived output characteristics
• Suitable for Si IGBTs and SiC MOSFETs
• Oscilloscope and fixture included

Potential to Research and Industry Service

• Prototype characterization
• Degradation tests after stress

Specifications

• Testing Current /Voltage:  100A / 1.2 kV
• Standard compliance:  JEDEC                                                
• Temperature Control:  Room temperature to 150˚C
• Size:  90 (W) x 65 (D) x 160 (H) [cm]
• Weight:  150 kg