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AAU Energy

By Professor, Francesco Iannuzzo

PhD Course: Modern IGBT gate driving methods for Enhancing Reliability of Power Converters

After more than four decades of development, Insulated Gate Bipolar Transistors (IGBTs) are widely used in many high-power industrial applications. However, the complex and harsh working conditions are demanding higher and higher reliability, reaching up to 30-year expected operating life.

AAU Energy

Pontoppidanstræde 101, Room 1.015, 9220 Aalborg East

  • 13.09.2023 08:30 - 14.09.2023 16:30
    : 23.08.2023

  • English

  • On location

AAU Energy

Pontoppidanstræde 101, Room 1.015, 9220 Aalborg East

13.09.2023 08:30 - 14.09.2023 16:3013.09.2023 08:30 - 14.09.2023 16:30
: 23.08.2023

English

On location

By Professor, Francesco Iannuzzo

PhD Course: Modern IGBT gate driving methods for Enhancing Reliability of Power Converters

After more than four decades of development, Insulated Gate Bipolar Transistors (IGBTs) are widely used in many high-power industrial applications. However, the complex and harsh working conditions are demanding higher and higher reliability, reaching up to 30-year expected operating life.

AAU Energy

Pontoppidanstræde 101, Room 1.015, 9220 Aalborg East

  • 13.09.2023 08:30 - 14.09.2023 16:30
    : 23.08.2023

  • English

  • On location

AAU Energy

Pontoppidanstræde 101, Room 1.015, 9220 Aalborg East

13.09.2023 08:30 - 14.09.2023 16:3013.09.2023 08:30 - 14.09.2023 16:30
: 23.08.2023

English

On location

Description

After more than four decades of development, Insulated Gate Bipolar Transistors (IGBTs) are widely used in many high-power industrial applications. However, the complex and harsh working conditions are demanding higher and higher reliability, reaching up to 30-year expected operating life. In parallel with IGBT modules, gate drivers have been also improved dramatically over the years, significantly contributing to reliability improvement. In fact, as an important interface between IGBT modules and controllers, modern gate drivers do not only provide optimal switching signals but also monitor the operation status of IGBT modules themselves. In particular, benefiting from the understanding of semiconductor behavior matured over the years, both wear status and abnormal events can be monitored and detected, respectively, thanks to modern IGBT gate driver technologies. This course presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules, hence power converters.

The course contents can be summarized in general switching theory, modern gate driving strategies, active thermal control, detection, and protection methods.

Find the detailed course program on PhD Moodle: https://phd.moodle.aau.dk/course/view.php?id=2191 

Programme

Topic and lecturer
Day 1: Lecturer - Francesco Iannuzzo
  • L1: Basic IGBT gate driving concepts
  • L2: Fault detection and protection methods
Day 2: Lecturer - Francesco Iannuzzo
  • L3: Active gating methods for enhancing switching characteristics
  • L4: Active thermal control methods using IGBT gate driver

Prerequisites

Basic knowledge of power device and power converter operation

Form of evaluation

The participants will be grouped in teams of 4-5 people and asked to design an original gate driver for a given application. Students will be asked to give a brief presentation at the end of the course, with a final evaluation of the individual contribution.

Price

8000 DKK for the Industry and 6000 DKK for PhD students outside of Denmark (VAT-FREE Education)

The Danish universities have entered into an agreement that allows PhD students at a Danish university (except Copenhagen Business School) the opportunity to free of charge take a subject-specific course at another Danish university.
Read more here: https://phdcourses.dk/  

Questions

hr@energy.aau.dk    

More information

https://www.energy.aau.dk/research/phd    

Course literature    

Slides from the lecturers